semihow rev.a1,march 2013 HTC4A60H HTC4A60H 3 quadrants standard triac absolute maximum ratings (t j =25 unless otherwise specified ) v drm = 600v i t(rms) = 4 a i tsm = 42 a i gt = 25ma features ? repetitive peak off - state voltage : 600v ? r.m.s on ? state current (i t(rms) = 4a) ? gate trigger current : 25ma ? high commutation capability. applications general purpose of ac switching, heating control, motor control, humidifier, etc general description semihow?s standard triac product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage . it is generally suitable for power and phase control in ac application symbol parameter conditions ratings unit v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 v v rrm repetitive peak reverse voltage 600 v i t(av) average on - state current full sine wave, t c = 102 o c 3.6 a i t(rms) r.m.s. on - state current 4 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 40/42 a i 2 t fusing current t = 10ms 8.8 a 2 s p gm forward peak g ate power dissipation t j = 125 c 5 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.5 w i fgm forward peak gate current t j = 125 c, pulse width 20us 2 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 5 v t j operating junction temperature - 40~+150 o c t stg storage temperature - 40~+150 o c t1 t2 g to - 126 symbol
semihow rev.a1,march 2013 HTC4A60H electrical characteristics (t j =25 unless otherwise specified ) thermal characteristics symbol parameter conditions min typ max unit r jc thermal resistance junction to case 4.2 o c /w r ja thermal resistance junction to ambient 58 o c /w notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 25 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 5.6a, i g = 50ma - 1.4 1.7 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 200 - - v/us i h holding current i t = 0.2a - 30 - ma
semihow rev.a1,march 2013 HTC4A60H 0 1 2 3 4 5 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] 30 o 0 1 2 3 4 5 0 2 4 6 8 30 o 60 o 90 o 120 o 150 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] 180 o 10 0 10 1 10 2 0 10 20 30 40 50 50hz 60hz surge on state current, i tsm [a] time [cycles] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.5w) p gm (5w) v gd gate voltage, v g [v] gate current, i g [ma] -50 -25 0 25 50 75 100 125 150 0 1 2 x 100 (%) igt(t o c) igt(25 o c) junction temperature, t j [ o c] i + gt1 i - gt1 i - gt3 -50 -25 0 25 50 75 100 125 150 0 1 2 junction temperature, t j [ o c] v + gt1 v - gt1 v - gt3 x 100 (%) igt(t o c) igt(25 o c) typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature
semihow rev.a1,march 2013 HTC4A60H typical characteristics fig 7. holding current vs. junction temperature fig 8. thermal impedance vs. pulse time fig 9. instantaneous on state current vs. instantaneous on state voltage r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. 10 -2 10 -1 10 0 10 1 10 0 10 1 thermal impedance [ o c/w] pulse time [sec] 0 1 2 3 4 5 10 -1 10 0 10 1 10 2 25 o c instantaneou on state current, i t [a] instantaneou on state voltage, v t [v] 150 o c -50 -25 0 25 50 75 100 125 150 0 1 2 junction temperature, t j [ o c] x 100(%) i h (t o c) i h (25 o c) r s =0.008 ? v to =1.15v
semihow rev.a1,march 2013 HTC4A60H to - 126 dimensions in millimeters package dimension
semihow rev.a1,march 2013 HTC4A60H to - 126 (forming) dimensions in millimeters package dimension
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